{"title":"Modelling of Acoustic Waves in Semiconductor in Contact with Thermally Conducting Fluid","authors":"I. Sharma","doi":"10.18689/mjnn-1000133","DOIUrl":null,"url":null,"abstract":"The present article is aimed at an investigation of the propagation of elasto-thermodiffusive (ETN) surface waves in a homogenous isotropic, thermally conducting, semiconductor material half-space underlying a thermally conductive viscous or inviscid liquid layer of finite thickness (d) with varying temperature. The relaxation times of heat and charge carrier fields are also taken into consideration during the study. Secular equation that governs the propagation of elasto-thermodiffusive surface (interfacial) waves in the considered composite structures has been derived in compact form after obtaining general wave solution of the model. Some particular forms of the general secular equation are also deduced and investigated. Numerical solution of secular equation and other relevant relations is carried out for germanium ( Ge ) and silicon (Si) semiconductor material under different situations with the help of functional iteration numerical technique along with irreducible case of Cardano’s method.","PeriodicalId":406289,"journal":{"name":"Madridge Journal of Nanotechnology & Nanoscience","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Madridge Journal of Nanotechnology & Nanoscience","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.18689/mjnn-1000133","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The present article is aimed at an investigation of the propagation of elasto-thermodiffusive (ETN) surface waves in a homogenous isotropic, thermally conducting, semiconductor material half-space underlying a thermally conductive viscous or inviscid liquid layer of finite thickness (d) with varying temperature. The relaxation times of heat and charge carrier fields are also taken into consideration during the study. Secular equation that governs the propagation of elasto-thermodiffusive surface (interfacial) waves in the considered composite structures has been derived in compact form after obtaining general wave solution of the model. Some particular forms of the general secular equation are also deduced and investigated. Numerical solution of secular equation and other relevant relations is carried out for germanium ( Ge ) and silicon (Si) semiconductor material under different situations with the help of functional iteration numerical technique along with irreducible case of Cardano’s method.