A 27/GHz/151 mW GaAs 256/258 dual-modulus prescaler IC with 0.1 /spl mu/m double-deck-shaped (DDS) gate E/D-HJFETs

Abstract

We have developed 0.1-/spl mu/m double-deck-shaped (DDS) gate enhancement-mode (E) and depletion-mode (D) heterojunction (HJ) FET technology based upon an all-dry-etching process, which enables high current-gain cut-off frequencies (f/sub T/) in both E- and D-mode FETs above 100 GHz. We also report the first 256/258 dual-modulus prescaler IC operating above 20 GHz with low power consumption. Obtained maximum input frequency for the prescaler was 27 GHz with power consumption of 151 mW at a supply voltage of 1.2 V. This power consumption is about 1/50 of the value extrapolated from ones reported for prescalers.