The current status and future prospects of SiC high voltage technology

Abstract

This paper reviews the recent progress of SiC MOSFETs rated above 3.3kV. The static and dynamic performance of 3.3 and 6.5kV-rated MOSFETs will be evaluated and benchmarked against similarly rated state-of-the-art Si IGBTs. A numerical comparison between high voltage (15kV) SiC MOSFETs and IGBTs will also be provided. The paper will also attempt to comment on the future challenges facing high voltage (HV) devices in SiC technology.