Ultra-Tiny Neural Network for Compensation of Post-soldering Thermal Drift in MEMS Pressure Sensors

G. Licciardo, P. Vitolo, S. Bosco, Santo Pennino, D. Pau, M. Pesaturo, L. D. Benedetto, R. Liguori
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Abstract

MEMS pressure sensors are widely used in several application fields, such as industrial, medical, automotive, etc, where they are required to be increasingly accurate and reliable. However, these sensors are very sensitive to mechanical and temperature variations. For example, the soldering process, which involves significant thermal stress, causes drift in the sensor accuracy. This article introduces a digital circuit implementing a very tiny neural network able to compensate for the drift measurement in real time. The circuit is capable of correcting for drift accuracy up to 1.6 hPa, restoring the accuracy to $\pm 0.5\ \text{hPa}$. Synthesis results on TSMC 130 nm CMOS technology show an area occupation of 0.0373 $\text{mm}^{2}$ and a dynamic power of 1.07 $\mu \mathrm{W}$, which enable its easy integration in the digital circuit which is available into MEMS sensor package for pressure measures conditioning.
微型神经网络补偿MEMS压力传感器焊接后热漂移
MEMS压力传感器广泛应用于工业、医疗、汽车等多个应用领域,对其精度和可靠性的要求越来越高。然而,这些传感器对机械和温度变化非常敏感。例如,焊接过程涉及显著的热应力,导致传感器精度漂移。本文介绍了一种能够实时补偿漂移测量的微型神经网络的数字电路。该电路能够校正高达1.6 hPa的漂移精度,将精度恢复到$\pm 0.5\ \text{hPa}$。在台积电130纳米CMOS工艺上的合成结果表明,其面积占用为0.0373 $\text{mm}^{2}$,动态功率为1.07 $\mu \ mathm {W}$,易于集成到数字电路中,可用于MEMS传感器封装的压力测量调节。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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