Nanopatterning by phase change nanolithography

Abstract

Several techniques such as the electron beam technology and ion beam technology are employed to obtain the high resolution nanopatterns. However, these techniques cause some problems, for example, the vacuum installation, high voltage power supply and low throughput, which consequently make these techniques more expensive. On the other hand, the organic resists used for lithography are important to control the shape and size of the patterns. The reactivity of the resist is dominated by the total irradiation amounts of a beam, that is, the number of electrons or ions or photons absorbed by the resist. As a result, the precision control of the shape and size for nanopatterns become difficult due to their intrinsic accumulation effect of the absorption in the resists.