Improved maximum cooling by optimizing the geometry of thermoelectric leg elements

Yan Zhang, Z. Bian, A. Shakouri
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引用次数: 6

Abstract

In this paper, we investigate the effect of the thermoelectric leg geometry and boundary conditions on the overall device cooling performance. We present a detailed 3D electrothermal analysis of heat and current distribution in a Bi/sub 2/Te/sub 3/ single-leg element with 50/spl times/50 /spl mu/m/sup 2/ cold side contact area, which is smaller than the element cross section (410/spl times/410 /spl mu/m/sup 2/). We compared the cases when a uniform voltage is applied at the contact and when a uniform current density is applied. The finite element calculation results demonstrate that in the latter case the 3D single-leg element has a very non-uniform temperature distribution at the contact area. Maximum cooling in the center region is 92/spl deg/C, which is 20% higher than the 1D limit (76/spl deg/C) for a typical Bi/sub 2/Te/sub 3/ material with ZT/spl sim/1. Calculations show that it is possible to take away 600 W/cm/sup 2/ at the center 20/spl times/20 /spl mu/m/sup 2/ region, which is 6 times better than the 1D device with the same thickness. In contrast, with a boundary condition of uniform voltage at the cold side contact area, the temperature distribution is as uniform as 1D device and reaches the same maximum cooling temperature as 1D. We also propose the possibility of using array contact structures to achieve the uniform current boundary condition that can improve the maximum device cooling performance. These findings add contact geometry as another degree of freedom to engineer the performance of single and multi stage TE devices.
通过优化热电腿元件的几何形状,提高了最大冷却效果
在本文中,我们研究了热电腿的几何形状和边界条件对器件整体冷却性能的影响。本文采用50/spl倍/50 /spl mu/m/sup 2/冷侧接触面积小于元件截面(410/spl倍/410 /spl mu/m/sup 2/)的Bi/sub 2/Te/sub 3/单腿元件,对其热和电流分布进行了详细的三维电热分析。我们比较了在触点处施加均匀电压和施加均匀电流密度的情况。有限元计算结果表明,在后一种情况下,三维单腿单元在接触区域的温度分布非常不均匀。中心区域的最大冷却温度为92/spl℃,比典型的ZT/spl sim/1的Bi/sub 2/Te/sub 3/材料的1D极限(76/spl℃)高20%。计算表明,在中心可带走600 W/cm/sup 2/ 20/spl倍/20 /spl亩/m/sup 2/区域,比同等厚度的1D器件好6倍。而在冷侧接触区电压均匀的边界条件下,温度分布与一维器件一样均匀,达到与一维器件相同的最高冷却温度。我们还提出了使用阵列接触结构来实现均匀电流边界条件的可能性,这可以提高器件的最大冷却性能。这些发现增加了接触几何作为设计单级和多级TE器件性能的另一个自由度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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