Development of micro-patterned carbon nanotube field emission arrays for high current applications

Changqing Chen, Wensheng Shao, M. Ding, Xinghui Li, Guodong Bai, Fuquan Zhang, Jinjun Feng
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引用次数: 3

Abstract

This paper presents micro-patterned carbon nanotube field emission arrays cathodes with an emitting unit area only 1mum in diameter. The fabrication process began with the deposition of a buffer layer of titanium-nitride on the silicon n type(100) substrate. Then a photo-resist overlay was patterned by conventional lithography technique to form 1mum circular aperture arrays, followed by depositing iron catalyst by electron beam deposition. Finally, the resist was removed, and carbon nanotubes grown by direct current plasma enhanced chemical vapor deposition (DC- PECVD). The field emission measurements showed a turn-on field as low as IV/mum, a current density of 90mA/cm2 at a field of 17V/mum, and with a fluctuation less than 5.6 percent over a period of 3.5 hours at an average current of 550 muA..
用于大电流应用的微图像化碳纳米管场发射阵列的研制
本文提出了一种发射单位面积直径仅为1mum的微图像化碳纳米管场发射阵列阴极。制造过程开始于在硅n型(100)衬底上沉积氮化钛缓冲层。然后用常规光刻技术在光刻胶覆盖层上形成1mm圆孔径阵列,再用电子束沉积法沉积铁催化剂。最后,去除抗蚀剂,采用直流等离子体增强化学气相沉积(DC- PECVD)法制备碳纳米管。场发射测量表明,导通场低至IV/mum,在17V/mum的场下电流密度为90mA/cm2,在平均电流为550 muA的3.5小时内波动小于5.6%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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