Design of a Wideband Differential LNA Based In CMOS 180 nm Technology

Abstract

In this work, a design of a wideband differential low-noise amplifier (LNA) is presented for 5G new radio handset receivers. It is shown that a RC feedback instead of the conventional resistive feedback in common-source topology consumes less dc power, maintains low noise Figure and flat gain over a wide frequency band. Further, use of an inter-stage gm boosting inductor and a parallel LC tank circuit at the input side keep other parameters like linearity, absolute gain, input matching and IIP3 comparable to other designs. As an example, a single stage differential LNA is designed in 180 nm C-MOS technology. The LNA provides a flat gain of 13.6 dB over 1.9-4.5GHz. The input reflection remains below -10dB, noise Figure below 2.9dB, reverse isolation over 41 dB over the whole bandwidth. While overall DC power consumption is 10.5mW and IIP3 is -2.5dBm.