Design of a V-band 2 × 2 dual-polarization dielectric resonator antenna array

Ta-Yeh Lin, T. Chiu, D. Chang
{"title":"Design of a V-band 2 × 2 dual-polarization dielectric resonator antenna array","authors":"Ta-Yeh Lin, T. Chiu, D. Chang","doi":"10.1109/EDAPS.2016.7893145","DOIUrl":null,"url":null,"abstract":"A high gain V-band on-chip 2×2 dual-polarization dielectric resonator antenna (DRA) array in silicon substrate based on Integrated Passive Device (IPD) technology is presented in the paper. In the proposed structure, dielectric resonator (DR) was fed by using wire-bond structures for bandwidth and antenna efficiency improvement. The simulation and measurement regarding the DRA element reflection coefficient and isolation are conducted for design validation. The simulated results show that the antenna can operate in V-band, and the impedance bandwidth with |S11| less than −10 dB is from 55.7 GHz to 65.8 GHz. The peak gain is 10.3 dBi. The proposed design is well suited for System-in-Package millimeter-wave radio front-ends.","PeriodicalId":191549,"journal":{"name":"2016 IEEE Electrical Design of Advanced Packaging and Systems (EDAPS)","volume":"105 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Electrical Design of Advanced Packaging and Systems (EDAPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDAPS.2016.7893145","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

A high gain V-band on-chip 2×2 dual-polarization dielectric resonator antenna (DRA) array in silicon substrate based on Integrated Passive Device (IPD) technology is presented in the paper. In the proposed structure, dielectric resonator (DR) was fed by using wire-bond structures for bandwidth and antenna efficiency improvement. The simulation and measurement regarding the DRA element reflection coefficient and isolation are conducted for design validation. The simulated results show that the antenna can operate in V-band, and the impedance bandwidth with |S11| less than −10 dB is from 55.7 GHz to 65.8 GHz. The peak gain is 10.3 dBi. The proposed design is well suited for System-in-Package millimeter-wave radio front-ends.
v波段2 × 2双极化介质谐振器天线阵列的设计
提出了一种基于集成无源器件(IPD)技术的高增益v波段片上2×2双极化介质谐振器天线阵列。在该结构中,介质谐振器(DR)采用线键结构馈电,以提高带宽和天线效率。为了验证设计,对DRA元件的反射系数和隔离度进行了仿真和测量。仿真结果表明,该天线可以工作在v波段,且S11小于- 10 dB的阻抗带宽在55.7 GHz ~ 65.8 GHz之间。峰值增益为10.3 dBi。所提出的设计非常适合系统级封装毫米波无线电前端。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信