Generation and focusing of high power ion beam in magnetically insulated diode with applied B-field

V. Bystritskii, S. Volkov, Y. Krasik, I. Lisitsyn, N. Polkovnikova
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引用次数: 1

Abstract

High-power ion beam (HPIB) generation and plasma formation processes in a magnetically insulated diode (MID) installed at a 3*10/sup 10/-W nanosecond accelerator are reported. The possibility of efficient HPIB ballistic focusing using the performed plasma in the HPIB transport region has been demonstrated. Several new diagnostics (spring pendulum and acoustic probe) were used to measure the plasma ablation pressure during the impact of the HPIB with the target. The plasma formation and its behavior in the diode gap were studied by a high-voltage probe, array of collimated Faraday cups, and streak image converter. The electron losses at the anode played the dominant role in the MID impedance behavior. The application of the active plasma source provided control of the HPIB characteristics and MID impedance behavior. The highest degree of HPIB focusing attained during the experiments with spherical-geometry diode electrodes was equal to 60. The ablation average pressures measured by spring pendulum gave several kilobars for 8-10 kA/cm/sup 2/ of HPIB density. The peak pressures attained tens of kilobars for respective HPIB current amplitudes.<>
外加b场磁绝缘二极管中高能离子束的产生和聚焦
本文报道了安装在3*10/sup 10/-W纳秒加速器上的磁绝缘二极管(MID)的高功率离子束(HPIB)产生和等离子体形成过程。在HPIB输运区利用等离子体进行高效HPIB弹道聚焦的可能性已经被证明。在HPIB与靶体撞击过程中,采用了几种新的诊断方法(弹簧摆和声波探头)来测量等离子体消融压力。采用高压探头、准直法拉第杯阵列和条纹图像转换器研究了等离子体在二极管缝隙中的形成及其行为。阳极处的电子损耗在MID阻抗行为中起主导作用。主动等离子体源的应用提供了对HPIB特性和MID阻抗行为的控制。在球面二极管电极实验中获得的HPIB聚焦的最高程度等于60。当HPIB密度为8 ~ 10 kA/cm/sup /时,弹簧摆测得的消融平均压力为几千巴。对于各自的HPIB电流幅值,峰值压力达到数十千巴。
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