C. Lai, Yueh Hsing Chang, Hung Ju Chien, Ming Chen Lu
{"title":"Amorphous carbon process optimization to increase hard mask and lithographic capabilities by its step coverage improvement","authors":"C. Lai, Yueh Hsing Chang, Hung Ju Chien, Ming Chen Lu","doi":"10.1109/ISNE.2017.7968713","DOIUrl":null,"url":null,"abstract":"The capabilities of hard mask (HM) and lithographic are strongly depended on the step coverage (S/C) of HM. Using C<inf>2</inf>H<inf>2</inf> base amorphous carbon (a-C) as HM gets better sidewall S/C than using C<inf>3</inf>H<inf>6</inf> one due to superior sticking coefficient (higher C/H ratio). As to performance of against PR rework, overlay mark without damage is displayed by adopting C<inf>2</inf>H<inf>2</inf> base a-C even five times PR rework. In our case, bad sidewall S/C of a-C film induces the device pattern damage of micro control unit (MCU). After optimizing the process of C<inf>2</inf>H<inf>2</inf> base a-C based on DOE trend of process parameter, sidewall S/C marvelously increases from 49% to 91%. Therefore, the amount of device pattern damage of MCU is obviously reduced.","PeriodicalId":195551,"journal":{"name":"2017 6th International Symposium on Next Generation Electronics (ISNE)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 6th International Symposium on Next Generation Electronics (ISNE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2017.7968713","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
The capabilities of hard mask (HM) and lithographic are strongly depended on the step coverage (S/C) of HM. Using C2H2 base amorphous carbon (a-C) as HM gets better sidewall S/C than using C3H6 one due to superior sticking coefficient (higher C/H ratio). As to performance of against PR rework, overlay mark without damage is displayed by adopting C2H2 base a-C even five times PR rework. In our case, bad sidewall S/C of a-C film induces the device pattern damage of micro control unit (MCU). After optimizing the process of C2H2 base a-C based on DOE trend of process parameter, sidewall S/C marvelously increases from 49% to 91%. Therefore, the amount of device pattern damage of MCU is obviously reduced.
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