{"title":"Initial results on the development of a new wafer inspection paradigm","authors":"T.A. El Doker, J. King, D. Scott","doi":"10.1109/IAI.2004.1300958","DOIUrl":null,"url":null,"abstract":"A new paradigm for wafer inspection is being developed that would resolve many of today's pending wafer inspection issues. This paradigm integrates 1) a DRAM fabrication line simulation model, producing synthetic images of \"typical\" wafer maps and associated defects, to 2) fuzzy clustering/declustering algorithms that identify various defects and 3) a unique defect tracking mechanism to monitor patterns of defects across wafer maps. This approach holds promise for in-line process control by allowing for off-site analysis of fabrication line problems and unsupervised adaptation and optimization of application-specific inspection algorithms. The paper reports on the progress made towards the fulfilment of this paradigm.","PeriodicalId":326040,"journal":{"name":"6th IEEE Southwest Symposium on Image Analysis and Interpretation, 2004.","volume":"111 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"6th IEEE Southwest Symposium on Image Analysis and Interpretation, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IAI.2004.1300958","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A new paradigm for wafer inspection is being developed that would resolve many of today's pending wafer inspection issues. This paradigm integrates 1) a DRAM fabrication line simulation model, producing synthetic images of "typical" wafer maps and associated defects, to 2) fuzzy clustering/declustering algorithms that identify various defects and 3) a unique defect tracking mechanism to monitor patterns of defects across wafer maps. This approach holds promise for in-line process control by allowing for off-site analysis of fabrication line problems and unsupervised adaptation and optimization of application-specific inspection algorithms. The paper reports on the progress made towards the fulfilment of this paradigm.