Graphene as thin film infrared optoelectronic sensor

G. Hwang, J. C. Acosta, E. Vela, S. Haliyo, Stephane Regnier1
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引用次数: 15

Abstract

We present the conductometric behavior of a single atomic carbon nanostructure (graphene) that could be promising to infrared optoelectronic applications. A graphene nanomanipulation system with focused infrared laser source for optoelectronic property characterizations is implemented. The feasibility of mechanical and electrical probing manipulations on two-dimensional thin film nanostructures is studied. Using this system, we revealed the infrared optoelectronic properties of mono- and multilayer graphene. The obtained optoelectronic parameters are compared to the single- and multi-walled nanotubes. A graphene infrared sensor is prototyped by direct writing of electrodes using gold nanoink fountain-pen method and is analyzed by electrical probing. Results show that graphene could be a promising building block for thin film optoelectronic devices.
石墨烯薄膜红外光电传感器
我们提出了一种单原子碳纳米结构(石墨烯)的电导行为,该结构有望用于红外光电应用。实现了一种具有聚焦红外激光源的石墨烯纳米操作系统,用于光电特性表征。研究了在二维薄膜纳米结构上进行机械和电探针操作的可行性。利用该系统,我们揭示了单层和多层石墨烯的红外光电特性。得到的光电参数与单壁和多壁纳米管进行了比较。采用金纳米墨水钢笔法直接写入电极,制作了一种石墨烯红外传感器原型,并进行了电探针分析。结果表明,石墨烯有望成为薄膜光电器件的重要组成部分。
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