Lateral distribution of metallic impurities in silicon bicrystals investigated by scanning MCTS

Abstract

Scanning minority carrier transient spectroscopy (SMCTS) is introduced as a tool to study interactions of impurities with extended defects. The optimum working conditions are discussed, and the influence of the sample surface preparation on the MCTS response is shown. Consequences for the SMCTS measurements are described. Gold- and iron-related defect interactions with grain boundaries are investigated by means of SMCTS.<>