The technology of laser formed interactions for wafer scale integration

G. H. Chapman, J. M. Canter, S.S. Cohen
{"title":"The technology of laser formed interactions for wafer scale integration","authors":"G. H. Chapman, J. M. Canter, S.S. Cohen","doi":"10.1109/WAFER.1989.47532","DOIUrl":null,"url":null,"abstract":"Restructurable VLSI wafer-scale circuits have been built using two methods, both using laser energy to create low resistance connections between bus lines on already existing circuits. In one technique verticle connections of about 10 Omega are made up from top metal, through silicon nitride, to first metal lines. The other involves melting of silicon in the gap between two implant regions, with the lateral diffusion of dopants creating connections of about 100 Omega . Details of the linking structures, their characteristics, and the apparatus used to interconnect them are described.<<ETX>>","PeriodicalId":412685,"journal":{"name":"[1989] Proceedings International Conference on Wafer Scale Integration","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"33","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"[1989] Proceedings International Conference on Wafer Scale Integration","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WAFER.1989.47532","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 33

Abstract

Restructurable VLSI wafer-scale circuits have been built using two methods, both using laser energy to create low resistance connections between bus lines on already existing circuits. In one technique verticle connections of about 10 Omega are made up from top metal, through silicon nitride, to first metal lines. The other involves melting of silicon in the gap between two implant regions, with the lateral diffusion of dopants creating connections of about 100 Omega . Details of the linking structures, their characteristics, and the apparatus used to interconnect them are described.<>
用于晶圆级集成的激光形成相互作用技术
可重构的VLSI晶圆级电路使用两种方法构建,两者都使用激光能量在现有电路的总线之间创建低电阻连接。在一种技术中,从顶部金属通过氮化硅到第一层金属线的垂直连接约为10 ω。另一种方法是在两个植入区域之间的间隙熔化硅,掺杂剂的横向扩散产生约100欧米茄的连接。描述了连接结构的细节、它们的特性以及用于连接它们的装置。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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