Device characteristics of vertical organic photoelectric transistor

Abstract

Vertical organic photoelectric transistors (OPTs) with copper phthalocyanine (CuPc) as active layers have been fabricated. The structure of OPTs fabricated consists of five layers of Cu/CuPc/Al/CuPc/ indium tin oxide (ITO). Compared with traditional organic field effect transistor (OFETs), the structure of vertical conductive channel in OPTs is advanced to static characteristics with high working current value, low operation voltage and large switching current ratio. The static current-voltage output characteristics of OPTs in 700 nm light and in dark are observed. It can be seen that emitter-collector current (Iec) increases steadily with the increase of emitter-collector voltage (Vec). But Iec decreases with the increase o f base voltage (Vb), and that is the increase of Schottky barrier in base region. The operation current in 700 nm light is larger than the one in dark. The switching current ratio is 14.5.