1.3 Analog CMOS from 5 micrometer to 5 nanometer

W. Sansen
{"title":"1.3 Analog CMOS from 5 micrometer to 5 nanometer","authors":"W. Sansen","doi":"10.1109/ISSCC.2015.7062848","DOIUrl":null,"url":null,"abstract":"In our future, as usual, analog designers will continue to expand their expertise and knowledge in response to changing needs. While devices will change their nature and operate at higher and higher frequencies, their I-V characteristics will remain similar. In the near term, increased speed of MOS circuits, will be reached by operating deeper in weak inversion. Offset and 1/f noise will continue to play a critical role. Thus, in general, it seems that analog expertise is insensitive to technology change.","PeriodicalId":188403,"journal":{"name":"2015 IEEE International Solid-State Circuits Conference - (ISSCC) Digest of Technical Papers","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"64","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Solid-State Circuits Conference - (ISSCC) Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2015.7062848","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 64

Abstract

In our future, as usual, analog designers will continue to expand their expertise and knowledge in response to changing needs. While devices will change their nature and operate at higher and higher frequencies, their I-V characteristics will remain similar. In the near term, increased speed of MOS circuits, will be reached by operating deeper in weak inversion. Offset and 1/f noise will continue to play a critical role. Thus, in general, it seems that analog expertise is insensitive to technology change.
1.3模拟CMOS从5微米到5纳米
在我们的未来,像往常一样,模拟设计人员将继续扩大他们的专业知识和知识,以应对不断变化的需求。虽然设备将改变其性质并在越来越高的频率下工作,但它们的I-V特性将保持相似。在短期内,将通过在弱反转中更深的操作来提高MOS电路的速度。偏置和1/f噪声将继续发挥关键作用。因此,一般来说,模拟专业知识似乎对技术变化不敏感。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信