High conversion gain millimeter-wave optoelectronic mixer based on InAlAs/InGaAs metamorphic HEMT

Abstract

We experimentally investigate the InAlAs/InGaAs metamorphic HEMT (m-HEMT) on GaAs substrate as a millimeter-wave optoelectronic mixer. The maximum internal conversion gain of 18.17 dB is obtained with 0 dBm local oscillator (LO) power. The m-HEMT exhibits a wide LO frequency range which is well extended to the millimeter-wave band. We also measured the spurious free dynamic range of the m-HEMT as an optoelectronic mixer, whose value is about 96 dBHz/sup 2/3/.