A High Power 15GHz GaAs FET

Abstract

Power performance results at 15GHz are presented for 2.4mm and 4.8mm devices. An output power 2.3 watts was achieved at 4dB gain from the 4.8mm device. A novel self-aligned technique which gives low gate resistance was used to achieve this result. Furthermore, excellent pellet power scaling allows combining of devices without excessive reduction in gain. This power scaling is obtained by flip-chip mounting on plated source posts, which gives exceptionally uniform common source inductance.