Improve timing margins on multi-rank DDR3 RDIMM using read-on die termination sequencing

A. Lingambudi, S. Vijay, W. Becker, Preetham Raghavendra, Saravanan Sethuraman, Sivarama K Pullelli
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引用次数: 0

Abstract

Modern computer systems have large amounts of DRAM running at fast cycle times. JEDEC standards for DDR3 DRAMs set the bounds of operation, but there is significant opportunity for maximizing the operating performance and reliability by optimizing the electrical parameters and the register settings across the many DIMMs in a system. Specifically, it is essential for the system designers to maximize the setup and hold timing margins for robust system operation. In this paper the hold timing of the data bus read operation is investigated. The methodology is presented and applied to setting the On-Die Termination (ODT) start/stop delay settings for optimal operation. The settings are verified by hardware characterization that confirms the updated delay settings improve the timing margin by performing a timing schmoo and observation of the waveforms with a logic analyzer and oscilloscope.
利用读入芯片终止顺序提高多阶DDR3 RDIMM的时序裕度
现代计算机系统有大量快速循环运行的DRAM。DDR3 dram的JEDEC标准设定了操作界限,但通过优化系统中多个dimm的电气参数和寄存器设置,可以最大限度地提高操作性能和可靠性。具体来说,对于系统设计人员来说,最大限度地设置和保持系统稳健运行的时间裕度是至关重要的。本文研究了数据总线读操作的保持时间问题。提出了该方法,并将其应用于设定模内终止(ODT)启动/停止延迟设置以实现最佳操作。这些设置通过硬件特性验证,通过使用逻辑分析仪和示波器对波形进行时序模拟和观察,确认更新的延迟设置提高了时序裕度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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