Electric field distribution perpendicular to the surface of mid-infrared antennas

Y. Nishimura, S. Mori, T. Kawano, Y. Kunichika, K. Kasahara, T. Yaji, N. Ikeda, H. Oosato, Y. Sugimoto
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引用次数: 1

Abstract

The electric field in the normal direction was experimentally investigated by using mid-infrared antennas that were formed on a thin Al2O3 layer/Si substrate. The Al2O3 layer could be as thin as a single nm-order employing the atomic layer deposition, and was varied from 2 nm to 50 nm. The field distribution was estimated by observing the reflectivity change. It was found that the electric field decreased rapidly until a 6 nm depth from the antenna plane, and that the degree of attenuation became relaxed in the deeper region.
垂直于中红外天线表面的电场分布
采用在Al2O3薄层/Si衬底上形成的中红外天线,对法向电场进行了实验研究。采用原子层沉积法制备的Al2O3层厚度可达到单纳米级,厚度在2 ~ 50 nm之间。通过观测反射率的变化来估计场的分布。结果表明,在距天线平面6nm深度处,电场衰减迅速减小,且衰减程度在更深的区域有所放松。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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