Recent fully differential amplifier in 0.35 μm SiGe BiCMOS technology for UWB applications

Proceedings of 21st International Conference Radioelektronika 2011 Pub Date : 2011-04-19 DOI:10.1109/RADIOELEK.2011.5936454

M. Liptaj, P. Galajda, M. Kmec

引用次数: 1

Abstract

The paper deals with the recent developments of a differential amplifier designed in 0.35 μm SiGe BiCMOS technology from Austriamicrosystems, Austria (AMS). The amplifier is a part of the manufactured chip, which also contains a pair of low noise amplifiers and digital frequency divider. The manufactured chip will be a part of the set of ASIC circuits designed for implementation in the recent UWB radar system architectures.

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最新的全差分放大器采用0.35 μm SiGe BiCMOS技术，用于超宽带应用

本文介绍了奥地利微系统公司(AMS)采用0.35 μm SiGe BiCMOS技术设计的差分放大器的最新进展。放大器是制造芯片的一部分，它还包含一对低噪声放大器和数字分频器。制造的芯片将成为ASIC电路设计的一部分，用于在最近的UWB雷达系统架构中实现。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of 21st International Conference Radioelektronika 2011

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