Seed layer controlled deposition of ZnO films with a tilted c-axis for shear mode resonators

G. Rughoobur, L. Garcia-Gancedo, A. Flewitt, W. Milne, M. DeMiguel-Ramos, M. Clement, T. Mirea, J. Olivares, E. Iborra
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引用次数: 2

Abstract

We investigate different procedures for achieving ZnO films with the c-axis tilted with respect to the normal for their application in acoustic resonators operating in the shear modes. The approach consists in combining the use of textured surfaces of different nature with off-axis sputtering, which promotes the growth of ZnO with inclined microcrystals. The rough surfaces investigated are porous-SiO2 and AlN and ZnO seed layers films specifically prepared to exhibit textured surfaces. The suitability of these films for the intended applications is tested by analyzing the frequency response of ZnO-based solidly mounted resonators. Electromechanical coupling factors for the shear modes up to 3.3% are achieved.
剪切模式谐振器中c轴倾斜ZnO薄膜的种子层控制沉积
我们研究了在剪切模式下工作的声学谐振器中实现c轴相对于法线倾斜的ZnO薄膜的不同方法。该方法将不同性质的织构表面与离轴溅射相结合,促进ZnO倾斜微晶的生长。所研究的粗糙表面是多孔sio2和AlN和ZnO种子层薄膜,专门制备了具有纹理表面的薄膜。通过分析zno基固体谐振器的频率响应,测试了这些薄膜对预期应用的适用性。剪切模态的机电耦合系数达到3.3%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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