A Semiparametric Transition Model for Lifetime Drift of Discrete Electrical Parameters in Semiconductor Devices

Lukas Sommeregger, H. Lewitschnig
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Abstract

Extended Abstract In automotive industry, quality and safety are of high importance. Especially with the upcoming development of autonomous vehicles, the topics of predictive health management and estimation of residual useful life have become topics of interest. Semiconductor manufacturers in this area have to guarantee a high standard of quality in shipped devices over their whole lifetime. Electrical parameters of these devices are specified in data sheets and have to be kept within specified limits over the devices’ expected usage time. To simulate the real lifetime, accelerated stress tests are performed on a random sample of parts. During these tests, electrical parameters may drift over time. This is called lifetime drift. To control for lifetime drift, tighter test limits are introduced at production testing. The goal of these limits is to guarantee quality levels in shipped devices while maximizing manufacturers’ yields. The areas between specified limits and test limits are called guard bands. Statistical models for drift calculation and guard banding parameter drift can be used to identify parameters indicating gradual degradation processes and to estimate the expected remaining useful life of the device. Random samples are put to environmental stress tests. In this way, longitudinal data are generated. Several lifetime drift models for continuous parameters have been developed in the past [1], [2]. However, for discrete parameters (logic vectors, bit-flips, counts etc.) these models are not universally applicable. Furthermore, existing models are currently too computationally expensive to monitor parameters in real time in self-driving vehicles. We propose a semiparametric and distribution-free mixed Markov transition model for discrete parameters based on interval estimation of transition probabilities from sparse data. Drift group formation is considered via clustering and mixture modelling. The method assumes homogenous behavior in the distribution of differences between successive readout points and can be extended to cover several types of interpolating behaviours. The guard banding algorithm is performed using efficient matrix multiplication with intelligent warm starts for the two-dimensional integer optimization problem. For the calculation of residual useful life, we propose one model based on interval estimations from quantile regression on the whole sample and further show how to extend the transition Markov chain model into unobserved time periods. The results are verified via simulation studies and compared to adapted state-of-the-art models for continuous parameters.
半导体器件中离散电参数寿命漂移的半参数跃迁模型
在汽车工业中,质量和安全是非常重要的。特别是随着自动驾驶汽车的发展,预测健康管理和剩余使用寿命的估计成为人们关注的话题。该领域的半导体制造商必须保证在其整个生命周期内出货设备的高质量标准。这些设备的电气参数在数据表中有规定,并且必须在设备的预期使用时间内保持在规定的范围内。为了模拟实际寿命,对随机取样的零件进行了加速应力测试。在这些测试中,电气参数可能随时间漂移。这被称为生命漂移。为了控制寿命漂移,在生产测试中引入了更严格的测试限制。这些限制的目标是保证出货设备的质量水平,同时最大限度地提高制造商的产量。在规定限值和测试限值之间的区域称为保护带。漂移计算和保护带参数漂移的统计模型可以用来识别指示逐渐退化过程的参数,并估计设备的预期剩余使用寿命。随机取样进行环境压力测试。这样就产生了纵向数据。过去已经建立了几个连续参数的寿命漂移模型[1],[2]。然而,对于离散参数(逻辑向量、位翻转、计数等),这些模型并不普遍适用。此外,现有的模型目前在计算上过于昂贵,无法实时监控自动驾驶汽车的参数。基于稀疏数据转移概率的区间估计,提出了离散参数的半参数无分布混合马尔可夫转移模型。通过聚类和混合建模考虑漂移群的形成。该方法假设连续读出点之间的差异分布具有均匀的行为,并且可以扩展到涵盖几种类型的插值行为。针对二维整数优化问题,采用高效矩阵乘法和智能热启动实现了保护带算法。对于剩余使用寿命的计算,我们提出了一种基于全样本分位数回归的区间估计的模型,并进一步展示了如何将过渡马尔可夫链模型扩展到不可观测的时间段。通过仿真研究验证了结果,并与适应的最先进的连续参数模型进行了比较。
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