A direct conversion quadrature transmitter with digital interface in 45 nm CMOS for high-speed 60 GHz communications

M. Abbasi, T. Kjellberg, A. de Graauw, R. Roovers, H. Zirath
{"title":"A direct conversion quadrature transmitter with digital interface in 45 nm CMOS for high-speed 60 GHz communications","authors":"M. Abbasi, T. Kjellberg, A. de Graauw, R. Roovers, H. Zirath","doi":"10.1109/RFIC.2011.5940690","DOIUrl":null,"url":null,"abstract":"A compact 60 GHz direct conversion quadrature transmitter is designed and fabricated in 45 nm standard LP CMOS. The transmitter features an integrated power amplifier with continuous output level control and interfaces binary data signals with nominal peak-to-peak voltage swing of 300 mV. The highest measured modulation bandwidth is limited by the measurement setup to 4 GHz but is simulated to be as high as 10 GHz. In single sideband up-converting operation mode, the measured image suppression ratio is 22 dB with 36 dB of carrier suppression corresponding to approximately 8% EVM in the output signal constellation. The output RF frequency can be from 54 GHz to 66 GHz to accommodate several channels and the output power can be adjusted from −3 dBm to 10 dBm. The chip is operated from a 2 V supply and draws 180 mA current.","PeriodicalId":448165,"journal":{"name":"2011 IEEE Radio Frequency Integrated Circuits Symposium","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE Radio Frequency Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2011.5940690","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11

Abstract

A compact 60 GHz direct conversion quadrature transmitter is designed and fabricated in 45 nm standard LP CMOS. The transmitter features an integrated power amplifier with continuous output level control and interfaces binary data signals with nominal peak-to-peak voltage swing of 300 mV. The highest measured modulation bandwidth is limited by the measurement setup to 4 GHz but is simulated to be as high as 10 GHz. In single sideband up-converting operation mode, the measured image suppression ratio is 22 dB with 36 dB of carrier suppression corresponding to approximately 8% EVM in the output signal constellation. The output RF frequency can be from 54 GHz to 66 GHz to accommodate several channels and the output power can be adjusted from −3 dBm to 10 dBm. The chip is operated from a 2 V supply and draws 180 mA current.
直接转换正交发射机与数字接口在45纳米CMOS高速60千兆赫通信
设计并制造了一种紧凑的60 GHz直接转换正交发射机,采用45 nm标准LP CMOS。发射机具有集成的功率放大器,具有连续输出电平控制和接口二进制数据信号,标称峰值电压摆幅为300 mV。测量的最高调制带宽受测量设置限制为4 GHz,但仿真结果高达10 GHz。在单边带上转换工作模式下,测量到的图像抑制比为22 dB,载波抑制为36 dB,对应于输出信号星座中约8%的EVM。输出射频频率为54ghz ~ 66ghz,可适应多个通道,输出功率为- 3dbm ~ 10dbm。该芯片由2v电源供电,并吸取180ma电流。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信