CMOS integrated system for magnetic field monitoring and gradient measurement in MRI environment

V. Frick, J. Pascal, L. Hébrard, J. Blonde, J. Felblinger
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引用次数: 10

Abstract

This paper reports on a standard CMOS integrated system for monitoring the magnetic fields in MRI environments. The sub-micron technology circuit features three horizontal hall devices and their associated electronics that form instrumental chains. Two of them are dedicated to millitesla range magnetic pulse and gradient measurement whereas the third one is for monitoring the strong static field of the MRI setup. The 0.35 mum technology prototype performs 130 muT gradient measurement with 20 muT resolution and can also map static fields as high as 1.5T.
MRI环境下磁场监测与梯度测量的CMOS集成系统
本文报道了一种用于MRI环境下磁场监测的标准CMOS集成系统。亚微米技术电路的特点是三个水平霍尔装置及其相关的电子设备,形成仪器链。其中两个专用于毫特斯拉范围的磁脉冲和梯度测量,而第三个用于监测MRI装置的强静态场。0.35 μ m技术原型以20 μ t分辨率进行130 μ t梯度测量,还可以绘制高达1.5 μ t的静态场。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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