MOM Capacitance Characterization in G-Band using On-wafer 3D-TRL Calibration

Abstract

In this paper Metal-Oxide-Metal (MOM) capacitors integrated in a BiCMOS 55-nm process are characterized by using 3D-TRL calibration technique. Using 3D electromagnetic (EM) simulation, optimized 3D-TRL standards were designed to cancel the impact of the Back-End-of-Line and define new reference planes at the MOM access-line on low level metal (Metal 4). The intrinsic MOM parameters were well extracted and good agreement was reached between, 3D EM simulation, Design-kit simulation and measurement within the frequency range from 140 to 220 GHz. Further, based on EM simulation, the 3D-TRL was compared to the conventional TRL. This proved the advantage of the 3D-TRL in the parasitic resistance extraction. To the best of author’s knowledge, it is the first time that MOM capacitors are accurately characterized in this frequency range.