An MTJ reading and writing control circuit applied in a 1-bit full adder

Abstract

To solve spin transfer torque magnetic random access memory ( STT-MRAM ) “writing” problem in practical application, an MTJ reading and writing control circuit for one bit full adder is proposed. In this circuit, logic gate circuit combined with control timing sequence are used to control "reading" and "writing" time of MTJ device in full adder. Applying the control circuit, full-adder can be switched between reading and writing mode, MTJ can be written in reliably, and the normal function of full adder will not be affected. Simulation results show that, under the control of the circuit, writing to MTJ can be achieved effectively while the function of full adder can be realized. Compared with traditional device, applying MTJ can greatly reduce system power consumption without writing.