K. Ino, M. Miura, Y. Nakano, M. Aketa, Noriaki Kawamoto
{"title":"SiC Power Device Evolution Opening a New Era in Power Electronics","authors":"K. Ino, M. Miura, Y. Nakano, M. Aketa, Noriaki Kawamoto","doi":"10.1109/EDSSC.2019.8754464","DOIUrl":null,"url":null,"abstract":"A new era in power electronics has been just opened by commercial introduction of silicon carbide (SiC) MOSFETs in a variety of power electronic systems such as power supplies, renewable energy, transportation, heating, robotics, and electric utility transmission/distribution. The utilization of SiC power devices in these systems can enable significant energy saving because of much lower power-loss devices compared to conventional silicon (Si) power devices. In this paper the progress of SiC power transistors is presented in comparison with Si MOSFETs and IGBTs.","PeriodicalId":183887,"journal":{"name":"2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2019.8754464","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
A new era in power electronics has been just opened by commercial introduction of silicon carbide (SiC) MOSFETs in a variety of power electronic systems such as power supplies, renewable energy, transportation, heating, robotics, and electric utility transmission/distribution. The utilization of SiC power devices in these systems can enable significant energy saving because of much lower power-loss devices compared to conventional silicon (Si) power devices. In this paper the progress of SiC power transistors is presented in comparison with Si MOSFETs and IGBTs.