Fabrication of Single Crystalline Zn0.85Cu0.15O Film Using CWD Coating Technique

Abstract

On view of several potential applications in the field of spintronics, optoelectronics and sensor-based devices; undoped and doped ZnO has been attracting a lot of attention to fabricate high quality single crystalline thin films. It is also essential to fabricate good quality and highly reproducible film with low cost. Taking this into view, we have synthesized Cu doped ZnO (Zn0.85Cu0.15O) by chemical wet and dry (CWD) coating technique indigenously developed in our lab. The developed set up has in-situ annealing facility for which post annealing is not required. In the beginning, highly pure Cu doped ZnO powders were synthesized by chemical route which is completely polycrystalline in nature. Then these polycrystalline powders were considered for preparation of solution with various molar concentrations, for fabrication of film of Cu doped ZnO. The synthesis parameters like driving speed of the gear for vertical movement of the substrate and molar concentration of solution were varied. It is observed from the XRD pattern that the synthesized film has grown in a particular orientation to form a layer which is single crystalline in nature. The electrical characterization has been carried out by Hall effect measurement set up.