Multilayer Neural Network with Synapse Based on Two Successive Memristors

Minh-Huan Vo
{"title":"Multilayer Neural Network with Synapse Based on Two Successive Memristors","authors":"Minh-Huan Vo","doi":"10.2174/1874129001812010132","DOIUrl":null,"url":null,"abstract":"\n \n Synapse based on two successive memristors builds the synaptic weights of the artificial neural network for training three-bit parity problem and five-character recognition.\n \n \n \n The proposed memristor synapse circuit creates positive weights in the range [0;1], and maps it to range [-1;1] to program both the positive and negative weights. The proposed scheme achieves the same accuracy rate as the conventional bridge synapse schemes which consist of four memristors.\n \n \n \n However, proposed synapse circuit decreases 50% the number of memristors and 76.88% power consumption compared to the conventional bridge memristor synapse.\n","PeriodicalId":370221,"journal":{"name":"The Open Electrical & Electronic Engineering Journal","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Open Electrical & Electronic Engineering Journal","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.2174/1874129001812010132","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

Synapse based on two successive memristors builds the synaptic weights of the artificial neural network for training three-bit parity problem and five-character recognition. The proposed memristor synapse circuit creates positive weights in the range [0;1], and maps it to range [-1;1] to program both the positive and negative weights. The proposed scheme achieves the same accuracy rate as the conventional bridge synapse schemes which consist of four memristors. However, proposed synapse circuit decreases 50% the number of memristors and 76.88% power consumption compared to the conventional bridge memristor synapse.
基于两个连续记忆电阻器的突触多层神经网络
基于两个连续记忆电阻器的突触建立人工神经网络的突触权值,用于训练3位奇偶校验问题和5字符识别。所提出的忆阻器突触电路在[0;1]范围内创建正权,并将其映射到范围[-1;1],从而对正权和负权进行编程。该方案与传统的由四个忆阻器组成的桥突触方案具有相同的准确率。然而,与传统的桥式记忆电阻突触相比,所提出的突触电路减少了50%的忆阻器数量和76.88%的功耗。
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