Enhanced MOSFET gate driver for pulsed power IVA module

Abstract

This paper describes the design of a MOSFET gate driver using an inductor based current source topology, which enables repetitive ultra-fast switching and reproducible pulses. Optimal design layout and grounding methods have been employed to minimise the parasitic inductances which can significantly limit the switching performance. The gate oxide is protected from overvoltage using TVS diodes without affecting the slew rate of the gate signal. The gate driver circuit was tested with upto three MOSFET devices in parallel. The experimental results demonstrate rise times of ∼ 4 ns and fall times of ∼ 9 ns. The capability of a single driver to switch multiple MOSFETs without compromising on their performance is also demonstrated and further discussed in this paper.