A V-band AlGaAs/InGaAs heterojunction FET MMIC dielectric resonator oscillator

Abstract

This paper reports a high performance V-band MMIC dielectric resonator oscillator (DRO). The DRO utilizing a 0.15 /spl mu/m gate AlGaAs/InGaAs heterojunction FET has exhibited stabilized oscillation with low phase noise of -88 dBc/Hz at 100 kHz off-carrier and the output power of 3.7 dBm at 55.135 GHz. The oscillation frequency stability of -1.9 ppm//spl deg/C was obtained with a dielectric resonator of +3.3 ppm//spl deg/C temperature coefficient.