A Gallium Nitride Intelligent Power Module Based on Bonding Wire Interconnection

Abstract

Short switching time of gallium nitride high electrons mobility transistors (GaN HEMTs) cause much more challenge for their package and integration. This article1proposes a hybrid packaging method based on bonding wire technology. This interconnection method inevitably increases the parasitic inductance of drive loop, leading to crosstalk and gate oscillation. A driving strategy to suppress these phenomena is applied in the gate loop. Finally, a hybrid packaging intelligent power module combined with print circuit board and direct bonding ceramic is fabricated. The power loop stray inductance of GaN HEMT half bridge is reduced to 1.94nH according to the experiment result. Based on the GaN half bridge of designed module, a 2.14kW boost converter has been built in this paper and its peak efficiency reaches 98.28%.