Backside nanotexturing protected by thin silicon layer for high bending strength ICs

Abstract

Backside nanotexturing fabricated by electroless metal assisted wet chemical etching, protected with a deposited thin silicon layer, is a new approach to create high bending strength silicon samples. Bending strength for protected nanotextured samples followed by CMP process was enhanced by ~3.4 folds as compared to polished silicon samples, which emphasize the possibility of industrial implementation. The morphology of silicon deposition layer upon nanotexture influences the stress behavior, which need an adequate fabrication technique for uniform deposition at wafer scale. The thin protection layer upon nanotexture prevents the unwanted particle trapping, which affects the electrical performances of the device. Moreover, this technology provides a rupture resistive solution for IC, MEMS and photovoltaic devices for industrial implementation.