The Development of Deep Diffusion Modes Involved in Production of Semiconductor Structures for the TVS with a Breakdown Voltage of 800 V

Abstract

In order to produce transient voltage suppressors (TVS), the impurity doping processes (for B, Al) have been developed with the aim of creating two types of structures: diffused structures that have a junction depth of up to 100 $\mu \mathrm{m}$ and a breakdown voltage within the range of 20…800 V; low-capacitance diffused structures that have a specific capacitance of p-n junction which does not exceed 80 pF/cm2. The paper presents the experimental dependencies of diffusion layer parameters on the conditions of the doping process. The dependencies of electrical parameters of the p-n junctions (such as breakdown voltage and capacitance) on both the conditions of the doping process and the substrate material used are presented in the paper, as well.