Improving Fast SiC MOSFET Switching Using an Inductive Gate Drive Approach

Abstract

An innovative gating scheme for wide bandgap semiconductor switches is investigated to fully exploit recent advances of SiC MOSFET properties in hold-off voltage (from single digits to tens of kV) and low on-state resistance (tens of mΩ). Robust gate driving techniques are required to achieve fast risetimes on the order of 10–20 ns. Further, due to the high dI/dt, and subsequent inductive kickback, parasitic inductance may drastically affect the performance of commercially available totem-pole gate drivers. Further, traditionally packaged MOSFETs exhibit additional degradation of switching characteristics due to the introduction of parasitics primarily due to their lead geometry.