Jiaxing Wang, Yipeng Ji, Zhuokai Yang, Huawen Hu, Fangzhou Li, Jianqiang Chen, Chihchiang Shen, C. Chang-Hasnain
{"title":"Microdot for transverse mode control in VCSEL","authors":"Jiaxing Wang, Yipeng Ji, Zhuokai Yang, Huawen Hu, Fangzhou Li, Jianqiang Chen, Chihchiang Shen, C. Chang-Hasnain","doi":"10.1109/CSW55288.2022.9930463","DOIUrl":null,"url":null,"abstract":"The VCSEL device with a SiN microdot of 2um in diameter and 120nm in thickness showed a very strong mode suppression of 20dB on the 0th-order mode. The resulting spectral RMS was reduced significantly from 0.65nm to 0.47nm. Excellent PAM4 53Gbps eye diagram was obtained after 100-meter fiber transmission.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 Compound Semiconductor Week (CSW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSW55288.2022.9930463","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
The VCSEL device with a SiN microdot of 2um in diameter and 120nm in thickness showed a very strong mode suppression of 20dB on the 0th-order mode. The resulting spectral RMS was reduced significantly from 0.65nm to 0.47nm. Excellent PAM4 53Gbps eye diagram was obtained after 100-meter fiber transmission.
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