17.5 A 98.2%-Efficiency Reciprocal Direct Charge Recycling Inductor-First DC-DC Converter

Abdullah Abdulslam, P. Mercier
{"title":"17.5 A 98.2%-Efficiency Reciprocal Direct Charge Recycling Inductor-First DC-DC Converter","authors":"Abdullah Abdulslam, P. Mercier","doi":"10.1109/ISSCC42613.2021.9365860","DOIUrl":null,"url":null,"abstract":"Inductive DC-DC converters are fundamentally limited by the trade-off between conduction losses and switching losses. Miniaturized converters used in applications such as mobile devices suffer badly from this trade off, as a small inductor has a large DCR, which contributes large I2 RDCR conduction losses, while a small inductance desires high frequency operation, which implies high CGATE V2 f hard charging switching losses from the power MOSFET gate drivers. Interestingly, the rise/fall time of such drivers cannot be too rapid, regardless of switching frequency, due to inductive ringing causing potential voltage stresses [1], [2]. To ease the conduction/switching loss trade-off, it is possible to exploit the requirement for finite rise/fall time by replacing conventionally hard-switching gate drivers with adiabatic charge-recycling (CR) gate drivers. As depicted in Fig. 17.5.1 (top right), CR can, through the help of inductor LR, recycle the charge stored on CGATE to another capacitance, CSTORE (and vice-versa), theoretically with 100% efficiency. This approach was demonstrated in [3], where the charge on the power MOSFET gates are recycled to two auxiliary capacitors through two separate inductors (Fig. 17.5.1, top left). However, besides the overhead of two inductors, recycling with separate storage capacitors introduces indirect losses, while the separated duty-cycled resonate gate drivers makes non-overlap timing control between power MOSFETs difficult. By AC-coupling the power NMOS to the resonant gate driver as in [4] (Fig. 17.5.1, bottom left), it is possible to reduce the number of resonant inductors to 1. However, the non-overlap time cannot be precisely controlled, leading to potentially large overlap losses, and the limited duty-cycle control through driver slope modulation prevents robust regulation across a wide output range.","PeriodicalId":371093,"journal":{"name":"2021 IEEE International Solid- State Circuits Conference (ISSCC)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Solid- State Circuits Conference (ISSCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC42613.2021.9365860","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

Inductive DC-DC converters are fundamentally limited by the trade-off between conduction losses and switching losses. Miniaturized converters used in applications such as mobile devices suffer badly from this trade off, as a small inductor has a large DCR, which contributes large I2 RDCR conduction losses, while a small inductance desires high frequency operation, which implies high CGATE V2 f hard charging switching losses from the power MOSFET gate drivers. Interestingly, the rise/fall time of such drivers cannot be too rapid, regardless of switching frequency, due to inductive ringing causing potential voltage stresses [1], [2]. To ease the conduction/switching loss trade-off, it is possible to exploit the requirement for finite rise/fall time by replacing conventionally hard-switching gate drivers with adiabatic charge-recycling (CR) gate drivers. As depicted in Fig. 17.5.1 (top right), CR can, through the help of inductor LR, recycle the charge stored on CGATE to another capacitance, CSTORE (and vice-versa), theoretically with 100% efficiency. This approach was demonstrated in [3], where the charge on the power MOSFET gates are recycled to two auxiliary capacitors through two separate inductors (Fig. 17.5.1, top left). However, besides the overhead of two inductors, recycling with separate storage capacitors introduces indirect losses, while the separated duty-cycled resonate gate drivers makes non-overlap timing control between power MOSFETs difficult. By AC-coupling the power NMOS to the resonant gate driver as in [4] (Fig. 17.5.1, bottom left), it is possible to reduce the number of resonant inductors to 1. However, the non-overlap time cannot be precisely controlled, leading to potentially large overlap losses, and the limited duty-cycle control through driver slope modulation prevents robust regulation across a wide output range.
17.5效率98.2%的反向直接电荷回收电感-首个DC-DC变换器
电感式DC-DC变换器从根本上受限于传导损耗和开关损耗之间的权衡。在移动设备等应用中使用的小型化转换器严重受到这种权衡的影响,因为小型电感具有大的DCR,这有助于大的I2 rdrcr导通损耗,而小型电感需要高频操作,这意味着功率MOSFET栅极驱动器的硬充电开关损耗高CGATE V2。有趣的是,无论开关频率如何,这种驱动器的上升/下降时间都不能太快,因为感应振铃会产生潜在的电压应力[1],[2]。为了减轻传导/开关损耗的权衡,可以通过用绝热电荷回收(CR)栅极驱动器取代传统的硬开关栅极驱动器来满足有限上升/下降时间的要求。如图17.5.1(右上)所示,CR可以通过电感器LR的帮助,将存储在CGATE上的电荷回收到另一个电容CSTORE上(反之亦然),理论上效率为100%。这种方法在[3]中得到了证明,其中功率MOSFET栅极上的电荷通过两个独立的电感回收到两个辅助电容器(图17.5.1,左上)。然而,除了两个电感器的开销外,使用单独的存储电容进行回收会引入间接损耗,而分离的占空比谐振栅驱动器使得功率mosfet之间的非重叠定时控制变得困难。通过将功率NMOS与谐振栅极驱动器进行交流耦合,如图[4]所示(图17.5.1,左下),可以将谐振电感的数量减少到1个。然而,非重叠时间不能精确控制,导致潜在的大重叠损失,并且通过驱动器斜率调制的有限占空比控制阻碍了在宽输出范围内的鲁棒调节。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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