Growth and field emission properties of carbon nanotubes on glass substrate of Ni catalyst layer using PECVD

L. Xin, W. Van, Weihua Liu, Changchun Zhu
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Abstract

The effects of NH3 on the growth characteristics of carbon nanotubes (CNTs) were systematically investigated in plasma enhanced chemical vapor deposition (PECVD) with C2H2 as a carbon source. The well aligned CNTs were grown from the Ni nanoparticles by plasma-enhanced chemical vapor deposition (PECVD). CNT films were formed with uniform surface morphology instead of nanotube-features. High-resolution transmission electron microscopy revealed that nanotubes grow from the boot with high adhesive ability. The lowest suitable growth temperature is around 560degC. The threshold field is smaller than 2 v/mum, the current within linear extend is from 200 to 700 mA. The luminescence of the CNTs film is not uniform, which resulted from the reduction of field screening effect
利用PECVD在镍催化剂层玻璃衬底上生长碳纳米管及其场发射性能
系统研究了以C2H2为碳源的等离子体增强化学气相沉积(PECVD)工艺中NH3对碳纳米管(CNTs)生长特性的影响。采用等离子体增强化学气相沉积(PECVD)技术从Ni纳米颗粒中生长出排列良好的碳纳米管。碳纳米管薄膜具有均匀的表面形貌,而不是纳米管的特征。高分辨率透射电镜显示,纳米管从靴靴中生长出来,具有较高的粘附能力。最低适宜生长温度在560℃左右。阈值场小于2 v/ mA,线性范围内电流为200 ~ 700 mA。碳纳米管薄膜的发光不均匀,这是由于场屏蔽效应降低所致
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