An 1 GHz Class E LDMOS Power Amplifier

2003 33rd European Microwave Conference, 2003 Pub Date : 2003-11-06 DOI:10.1109/EUMA.2003.340946

A. Ådahl, H. Zirath

引用次数: 26

Abstract

A class E power amplifier working at 1 GHz and with an LDMOS transistor as switching element has been developed. The circuit is implemented with lumped and distributed elements. An output power of 6.2 W at 69 % drain efficiency with a gain of 11 dB was obtained at 1 GHz. Both simulations and measurements of the amplifier are presented within this paper. This is to our knowledge the highest efficiency and output power reported for a class E amplifier at 1 GHz.

查看原文本刊更多论文

1 GHz E类LDMOS功率放大器

研制了一种工作频率为1ghz、开关元件为LDMOS晶体管的E类功率放大器。该电路采用集总和分布式元件实现。在1 GHz频率下，输出功率为6.2 W，漏极效率为69%，增益为11 dB。文中给出了放大器的仿真和测量结果。据我们所知，这是1 GHz的E类放大器报告的最高效率和输出功率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2003 33rd European Microwave Conference, 2003

自引率

0.00%

发文量