Resonant Metal Cantilever with Attogram/Hz Mass Sensitivity Fully Integrated in a Standard 0.35-μm CMOS Process

J. Verd, G. Abadal, J. Teva, A. Uranga, F. Pérez-Murano, J. Esteve, N. Barniol
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引用次数: 4

Abstract

This paper presents the design, fabrication and characterization of a high-sensitivity mass sensor based on a laterally resonating metal cantilever that is fully compatible with standard CMOS technologies, and which post-CMOS process is based on a single step wet etching process without the need of any additional lithographic process. The system uses electrostatic actuation and capacitive readout performed by a high-sensitivity readout circuitry monolithically integrated. The expected mass sensitivity of the metal resonators presented is around 1 ag/Hz and 4.5 ag/Hz for punctual mass and uniform mass deposition respectively. These sensitivities have been corroborated experimentally by means of two kinds of experiments: deposition of a punctual mass and deposition of a thin film of gold.
谐振金属悬臂与阿图/赫兹质量灵敏度完全集成在一个标准的0.35-μm CMOS工艺
本文介绍了一种基于横向谐振金属悬臂的高灵敏度质量传感器的设计、制造和表征,该传感器与标准CMOS技术完全兼容,其后CMOS工艺基于单步湿法蚀刻工艺,无需任何额外的光刻工艺。该系统采用静电驱动和电容读出,由高灵敏度读出电路单片集成。对于准时质量和均匀质量沉积,所提出的金属谐振器的预期质量灵敏度分别约为1 ag/Hz和4.5 ag/Hz。这些灵敏度已经通过两种实验得到了证实:准时质量的沉积和金薄膜的沉积。
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