{"title":"High-power violet light emitting diodes with electroplating copper heat spreader","authors":"Ruixuan Li, Guangen Fan, Yong Zhang, Xian-wen Chen","doi":"10.1109/AOM.2010.5713543","DOIUrl":null,"url":null,"abstract":"Using self-alignment photolithography and copper electroforming techniques, we have developed a size of 1mm×1mm high power GaN-based violet LED embedded in a reflective cup-shaped copper heat spreader. The packaged LED chip sample with copper heat spreader driven at 1 A current yield the light output power of 310 mW, about 1.55 times to the conventional LED. Moreover, the power efficiency is remarkably increased from 4.21% to 6.61% at the same driven current. These results indicate that the novel heat dissipation, a direct Cu heat spreader by a metal connection to the device, did efficiently extract the heat from the chip. The result exhibit a new solution to thermal management of high power GaN-based violet LED samples.","PeriodicalId":222199,"journal":{"name":"Advances in Optoelectronics and Micro/nano-optics","volume":"72 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advances in Optoelectronics and Micro/nano-optics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/AOM.2010.5713543","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Using self-alignment photolithography and copper electroforming techniques, we have developed a size of 1mm×1mm high power GaN-based violet LED embedded in a reflective cup-shaped copper heat spreader. The packaged LED chip sample with copper heat spreader driven at 1 A current yield the light output power of 310 mW, about 1.55 times to the conventional LED. Moreover, the power efficiency is remarkably increased from 4.21% to 6.61% at the same driven current. These results indicate that the novel heat dissipation, a direct Cu heat spreader by a metal connection to the device, did efficiently extract the heat from the chip. The result exhibit a new solution to thermal management of high power GaN-based violet LED samples.