Functional optoelectronic properties of n-i-p-i superlattices and structures

Proceedings of 2001 3rd International Conference on Transparent Optical Networks (IEEE Cat. No.01EX488) Pub Date : 2001-06-18 DOI:10.1109/ICTON.2001.934720

V. Kononenko, Dmitrii Ushakov

引用次数: 2

Abstract

A description of the electron energy structure and optical and electric parameters of doping superlattices is given and different physical phenomena and possible device applications are discussed. Previous results in the development of photodetectors, laser sources, optical modulators, and other doping superlattice structures are reviewed.

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n-i-p-i超晶格及其结构的功能光电特性

给出了掺杂超晶格的电子能量结构和光学、电学参数的描述，并讨论了不同的物理现象和可能的器件应用。综述了光电探测器、激光源、光调制器和其他掺杂超晶格结构的研究进展。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of 2001 3rd International Conference on Transparent Optical Networks (IEEE Cat. No.01EX488)

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