Overheating-Avoidance Remapping Scheme for Reliability Enhancement of 3D PCM Storage Systems

Abstract

With the trend of 3D architecture and higher access rate, Phase Change Memory (PCM) storage devices face the overheating issue. This work is motivated by the observation that PCM devices might change states of memory cells with high temperature, and it will hurt the reliability of 3D PCM storage systems. Hence, we propose an Overheating-Avoidance Remapping Scheme (OARS) that controls the temperature of PCM layers and achieves wear-leveling of PCM cells inside PCM devices. Besides, we also take remapping overhead into consideration. The experiments were conducted based on the representative realistic workloads, and the results demonstrate the efficacy of the proposed scheme.