Sub-Nanojoule Electro-Optic Switching Using Ge2Sb2Te5Integrated on Silicon Waveguide

Abstract

We report electro-thermal investigation of 1×1 non-volatile switch operating at 1.55 µm, using reversible phase change in Ge2Sb2Te5. The switch provides 26.43 dB extinction ratio and 1.62 dB insertion loss with sub-nano joule switching energy.