Simulation and analysis on transient performance of VDMOS

Meng Qing-gang, Li Bin
{"title":"Simulation and analysis on transient performance of VDMOS","authors":"Meng Qing-gang, Li Bin","doi":"10.1109/MIC.2013.6758199","DOIUrl":null,"url":null,"abstract":"VDMOS has the features of large input impedance, high switching speed and well heat stability. It has been applied widely to motor drive, switch power supply, automotive electronics and energy saving lamp and so on. Currently, the development of VDMOS in our country is still in the starting stage and the research on it is not mature. This paper aims to designing model and simulation study of VDMOS. About the design, it will be calculated from the formation and parameter. The dosage concentration of any parts of the device will be also devised on the basis of breakdown voltage that meets predicted design. Besides, the dynamic characteristics of VDMOS can be simulated through usage of MEDICI software.","PeriodicalId":404630,"journal":{"name":"Proceedings of 2013 2nd International Conference on Measurement, Information and Control","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 2013 2nd International Conference on Measurement, Information and Control","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIC.2013.6758199","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

VDMOS has the features of large input impedance, high switching speed and well heat stability. It has been applied widely to motor drive, switch power supply, automotive electronics and energy saving lamp and so on. Currently, the development of VDMOS in our country is still in the starting stage and the research on it is not mature. This paper aims to designing model and simulation study of VDMOS. About the design, it will be calculated from the formation and parameter. The dosage concentration of any parts of the device will be also devised on the basis of breakdown voltage that meets predicted design. Besides, the dynamic characteristics of VDMOS can be simulated through usage of MEDICI software.
VDMOS瞬态性能仿真与分析
VDMOS具有输入阻抗大、开关速度快、热稳定性好等特点。已广泛应用于电机驱动、开关电源、汽车电子、节能灯等领域。目前,我国VDMOS的发展还处于起步阶段,研究还不成熟。本文旨在对VDMOS进行模型设计和仿真研究。关于设计,将从地层和参数进行计算。器件任何部分的剂量浓度也将根据满足预测设计的击穿电压来设计。此外,利用MEDICI软件对VDMOS的动态特性进行了仿真。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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