Cd0.2hg0.8te epi—layer for a high detectivity pc—type ir detector

Y. Komine, Y. Yoshida, M. Hibino, Y. Hisa, R. Ohkata, K. Ikeda, W. Susaki, K. Yasumura, K. Sato
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Abstract

High quality n-type Cd0.2Hg 0.8Te epi-layers doped with In below 0.1 ppm, whose carrier concentration and mobility at 77 K are below 4×1014 cm−3 and over 2× 105 cm2/V·S, respectively, have been grown by LPE on CdTe (111) B substrates with EPDs below 105 cm−2. A new result obtained is that long carrier diffusion length is essentially important for realizing a high performance detector, whose detectivity reaches to D∗BLIP.
cd0.2 hg0.8外延层用于高探测率pc型红外探测器
利用LPE技术,在EPDs低于105 cm−2的CdTe (111) B衬底上生长出了高质量的n型Cd0.2Hg 0.8Te外接层,In掺杂量低于0.1 ppm,载流子浓度低于4×1014 cm−3,77 K迁移率大于2× 105 cm2/V·S。一个新的结果是,长载流子扩散长度对于实现探测率达到D * BLIP的高性能探测器至关重要。
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