Differential Broadband Transimpedance Amplifier in 130 nm SiGe BiCMOS

Abstract

To build modern ultrafast systems on chip, high-frequency transimedance amplifiers are required. In view of the fact that the amplifier is connected at the output of the system, high requirements the level of nonlinear distortions are imposed on. In addition, the amplifier should have a small unevenness in the bandwidth. The article presents a fully differential transimpedance amplifier, which allows to match the system with a load of 50 Ω. The amplifier has a range of operating frequencies of 0.1 … 3 GHz, gain of 20 dB, with a unevenness not exceeding 2 dB. The described amplifier is built in the 130 nm SiGe BiCMOS process. Operating temperature range −40 … 85°C. The current consumption is 18 mA.