Body Biasing Injection: Impact of substrate types on the induced disturbancesƒ

G. Chancel, J. Gallière, P. Maurine
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引用次数: 1

Abstract

Body Biasing Injection (BBI) is one of the most recent fault injection techniques. It consists of applying voltage pulses onto the substrate of integrated circuits (ICs) using a sharp needle. Because this technique is more recent, there is little information about the nature of the injected disturbances in the ICs. It is especially true if one considers that the substrate of microcontrollers can either be of dual or triple-well types, and thus can have different susceptibility to BBI. In previous work, a study of the effects of thinning the substrate of ICs on BBI and an electrical model were proposed. However, this study was only conducted for dual-well ICs. As a result, this paper provides enhanced electrical models to simulate the distribution of BBI disturbances through the different substrates, and it also gives a global view of the different BBI induced effects in relation to the nature of the substrate and the polarity of the injected voltage pulses.
体偏置注射:衬底类型对诱导扰动的影响
体偏注入(BBI)是一种最新的断层注入技术。它包括使用锋利的针在集成电路(ic)的衬底上施加电压脉冲。由于这种技术是最近才出现的,所以关于集成电路中注入扰动的性质的信息很少。如果考虑到微控制器的衬底可以是双孔或三孔类型,则尤其如此,因此对BBI的敏感性可能不同。在以前的工作中,我们研究了薄化ic衬底对BBI的影响,并提出了一个电模型。然而,该研究仅针对双井集成电路进行。因此,本文提供了增强的电模型来模拟BBI干扰通过不同衬底的分布,并且还给出了与衬底性质和注入电压脉冲极性有关的不同BBI诱导效应的全局视图。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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